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Fabrication of lateral RF MOS devices with enhanced RF properties
Fabrication of lateral RF MOS devices with enhanced RF properties
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机译:具有增强的RF特性的横向RF MOS器件的制造
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摘要
Methods of fabrication of a lateral RF MOS device having a non- diffusion connection between source and substrate are disclosed. In one embodiment, the lateral RF MOS device has an interdigitated silicided gate structure. In another embodiment, the lateral RF MOS device has a quasi-mesh silicided gate structure. Both sides of each gate are oxidized thus preventing possible shorts between source and gate regions and between drain and gate regions. The top of each gate is silicided once the protective layer of silicon nitride is removed.
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