Evaluation method of semiconductor layer, method for fabricating semiconductor device, and storage medium

摘要

Measurement light, which has been emitted from a Xe light source (20) and then linearly polarized by a polarizer (21), is made to be incident at a tilt angle on a region in a silicon substrate (11) with crystallinity disordered by the implantation of dopant ions. And the spectra of cos&Dgr; and tan &psgr; are measured with a variation of the measurement light, where &Dgr; is a phase difference between respective components in p and s directions as to the light reflected as an elliptically-polarized ray, and &psgr; is a ratio between the amplitudes of these components. By correlating in advance the spectral patterns of cos&Dgr; and so on with the thickness of an amorphous region through a destructive test or the like, or by paying special attention to characteristic parts of the patterns of cos&Dgr; and so on, the thickness or the degree of disordered crystallinity of the amorphous region is estimated. Also, since a variation in the thickness of the amorphous region can be identified based on a variation of cos. DELTA. before and after a heat treatment, a temperature of the heat treatment can be sensed based on the variation of the thickness. Thus, an evaluation method allowing for nondestructive estimation of the thickness and the degree of disorder of a region, having crystallinity disordered by implanting dopant ions into a semiconductor region at a high level, can be provided.