FILM THICKNESS EVALUATION METHOD, FILM THICKNESS EVALUATION DEVICE, SEMICONDUCTOR MANUFACTURING DEVICE, SEMICONDUCTOR DEVICE AND COMPUTER READABLE STORAGE MEDIUM RECORDING PROGRAM FOR MAKING COMPUTER REALIZE FILM THICKNESS EVALUATION FUNCTION

摘要

PROBLEM TO BE SOLVED: To provide the accurate film thickness of an SiO₂ thin film on an Si substrate based on photoelectric intensity for which a diffraction effect is removed in an X-ray photoelectric spectral method. ;SOLUTION: The photoelectric intensity I1_sub from the Si substrate not provided with the thin film on a surface measured at plural azimuth angles ϕ is obtained. The photoelectric intensity I2_sub from an area where the surface of the Si substrate is made amorphous is obtained. The polar angle distribution of standardized photoelectric intensity obtained by dividing I1_sub by I2_sub is obtained. The azimuth angle ϕfor which the number of polar angles θ for turning the value of the standardized photoelectric intensity to 1.0 is the largest and the value of the polar angle θ at the azimuth angle ϕ are selected. The photoelectric intensity I_sub from the Si substrate provided with the SiO₂ thin film on the surface is measured at the selected angles ϕand θ. Based on I_sub and a prescribed calculation formula, the film thickness of the SiO₂ thin film is calculated.;COPYRIGHT: (C)1999,JPO