首页> 外国专利> FILM FORMATION PROCESS EVALUATING APPARATUS AND METHOD, COMPUTER-READABLE RECORDING MEDIUM WITH FILM FORMATION PROCESS EVALUATING PROGRAM STORED THEREON, AND METHOD OF MANUFACTURING SEMICONDUCTOR ELEMENT

FILM FORMATION PROCESS EVALUATING APPARATUS AND METHOD, COMPUTER-READABLE RECORDING MEDIUM WITH FILM FORMATION PROCESS EVALUATING PROGRAM STORED THEREON, AND METHOD OF MANUFACTURING SEMICONDUCTOR ELEMENT

机译:膜形成过程评估装置和方法,存储有膜形成过程评估程序的计算机可读记录介质,以及制造半导体元件的方法

摘要

PROBLEM TO BE SOLVED: To provide a film formation process evaluating apparatus which can accurately determine film formation process conditions for formation of a deposited film in a semiconductor element or the like, and also to provide an evaluation program thereof. ;SOLUTION: Information about surface shape and film formation process time at a given measurement time on a deposited film is input to a velocity vector extraction part 113 via an input part 121. In a surface shape extracting part 114 and a film-formation event contribution rate extracting part 115, a contribution rate of each event is calculated on the basis of a physical event model associated with the film formation at a given point and kept in a storage part 116, together with its coordinate values. The surface shape extracting part 114 creates a surface shape, based on a set of given points, and a control part 112 sets a process time and outputs information on the latest contribution rate of the storage part 116 to an output part 122. The user sets film formation process conditions in a manufacturing conditions determination part 117 by referring to the last information, and sends the determination conditions to a semiconductor element manufacturing apparatus 123 to manufacture a semiconductor element on the basis of the conditions.;COPYRIGHT: (C)2001,JPO
机译:解决的问题:提供一种成膜过程评估装置,其可以准确地确定用于在半导体元件等中形成沉积膜的成膜过程条件,并且还提供其评估程序。 ;解决方案:在给定的测量时间上,关于沉积膜的表面形状和膜形成过程时间的信息通过输入部分121输入到速度矢量提取部分113。在表面形状提取部分114中和膜形成事件贡献速率提取部分115,基于与在给定点的成膜相关的物理事件模型计算每个事件的贡献率,并将其坐标值保存在存储部分116中。表面形状提取部分114基于一组给定点来创建表面形状,并且控制部分112设置处理时间,并将关于存储部分116的最新贡献率的信息输出到输出部分122。制造条件确定部分117中的成膜工艺条件参考最后的信息,并将确定条件发送给半导体元件制造设备123以根据这些条件制造半导体元件。(C)2001,日本特许厅

著录项

  • 公开/公告号JP2001274152A

    专利类型

  • 公开/公告日2001-10-05

    原文格式PDF

  • 申请/专利权人 TOSHIBA CORP;

    申请/专利号JP20000085032

  • 发明设计人 KINOSHITA SHIGERU;

    申请日2000-03-24

  • 分类号H01L21/31;H01L21/00;

  • 国家 JP

  • 入库时间 2022-08-22 01:29:23

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