Manufacturing methods and quartz glass crucible of silicon single crystal

摘要

PURPOSE: To prevent the OSF secular change of a silicon single crystal by Czochralski method. ;CONSTITUTION: A quartz glass crucible is formed so that the Al concn. in the depth direction from the internal surface is 40-500ppmw in average concn. from the internal surface to 30μm depth, 40ppmw in average concn from 30μm to 1mm and the Cu concn. from the internal surface to the external surface is ≤0.5ppmw and a N-type silicon single crystal is pulled up by using the crucible by Czochralski method. And when a quartz glass crucible formed so that the Al concn. in the depth direction is 40ppmw in average concn. from the internal surface to 30μm depth is used, Al is doped to produce a silicon single crystal having the same Al concn. as the case that the quartz glass crucible is used.;COPYRIGHT: (C)1996,JPO