METHOD OF CLEANING SURFACE OF PROCESS CHAMBER

摘要

PROBLEM TO BE SOLVED: To provide a method of cleaning the surface of a process chamber which can surely remove the matter having adhered to the surface of the process chamber, without doing damage to the surface of the process chamber. ;SOLUTION: After finish of the etching treatment to a specified number of wafers W, the anodized surface of the upper chamber part 5 in the process chamber 2 is wiped with cloth or the like wet with IPA or water. Next, a chemical vessel containing H2O2 is prepared, and H2O2 within the chemical vessel is heated to a temperature just before boiling. Then, the upper chamber 5 is put in the heated H2O2, and it is let alone for a specified time. Whereupon, reduction occurs to byproducts adhering to the anodized surface of the upper chamber part 5, and the byproducts are removed.;COPYRIGHT: (C)2001,JPO