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FORMATION OF TITANIUM NITRIDE THIN FILM AND TITANIUM NITRIDE THIN FILM FORMED IN ACCORDANCE WITH THE METHOD

机译:用该方法形成的氮化钛薄膜和氮化钛薄膜的形成

摘要

PROBLEM TO BE SOLVED: To provide a method for forming a titanium nitride thin film capable of forming a titanium nitride thin film having high hardness and capable of exhibiting the intrinsic physical properties characteristic of the material on the surface of a metallic material with increased adhesion in an economical vacuum and to provide a titanium nitride thin film formed in accordance with this method.;SOLUTION: This is a method for forming a titanium nitride thin film in which the surface of a metallic material is irradiated with a nitrogen beam and a titanium beam by an ion beam mixing method to form a titanium nitride thin film, and the titanium nitride thin film is formed in such a manner that the vacuum is controlled higher than 10 mTorr, the temp. of the surface of the metallic material is controlled to 20 to 1,000°C, the nitrogen beam has ≥20% ionization degree and is accelerated to 0.1 to 5 keV, and moreover, the intensity of the nitrogen beam IN satisfies IN≥ITi to the intensity of the titanium beam ITi.;COPYRIGHT: (C)2001,JPO
机译:解决的问题:提供一种形成氮化钛薄膜的方法,该方法能够形成具有高硬度的氮化钛薄膜,并且能够在金属材料的表面上显示出材料的固有物理特性,并且在金属材料中具有增加的粘附性。经济的真空,并提供根据此方法形成的氮化钛薄膜。通过离子束混合法形成氮化钛薄膜,并以将真空度控制为高于温度10mTorr的方式形成氮化钛薄膜。将金属材料的表面的电子束的温度控制为20至1,000℃,氮束的电离度为≥ 20%,并被加速至0.1至5 keV,并且,氮束的强度IN满足IN&ITi。钛射线强度ITi 。;版权:(C)2001,日本特许厅

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