FORMING METHOD OF DENSE TITANIUM NITRIDE FILM AND DENSE NITRIDE FILM/TITANIUM SILICIDE THIN FILM AND MANUFACTURE OF SEMICONDUCTOR DEVICE THEREWITH

摘要

PURPOSE: To provide a method of forming a dense titanium film which contains an excessive amount of N though a sputtering method wherein a target where a titanium nitride film is formed on its surface is used in a sputtering method. ;CONSTITUTION: A target where a titanium nitride film is formed is subjected to sputtering so as to deposit a titanium film 41 which excessively contains nitrogen atoms on a semiconductor substrate 40, and the semiconductor substrate 40 is subjected to a quick thermal treatment twice, whereby a titanium silicide thin film 42 and a dense nitride film 43 are formed on the semiconductor substrate.;COPYRIGHT: (C)1996,JPO