Formation method of titanium nitride thin film and titanium nitride thin film formed according to the method

摘要

A method of forming a titanium nitride thin film using a chemical vapor deposition method, the method comprising: (a) forming a first titanium nitride film on a semiconductor substrate using a metal organic source containing titanium and nitrogen; (b) forming a second titanium nitride film by alternately using a metal organic source containing titanium and nitrogen and ammonia gas on the resultant in turn to provide a method of forming a titanium nitride thin film. According to the present invention, a titanium nitride thin film having excellent step coverage, specific resistance and stability can be obtained.