EXCHANGE COUPLING FILM, MAGNETORESISTIVE EFFECT ELEMENT FORMED BY USE THEREOF, AND THIN FILM MAGNETIC HEAD USING MAGNETORESISTIVE EFFECT ELEMENT

摘要

PROBLEM TO BE SOLVED: To solve a problem in which a magnetoresistive effect device of conventional structure cannot be enhanced in resistance change rate. ;SOLUTION: A seed layer 22 is provided on the surface of an antiferromagnetic layer 4 opposite to its other surface coming into contact with a stationary magnetic layer 3. The seed layer 22 is primarily face-centered cubic in crystal structure, and as to its crystal orientation, crystals are preferentially oriented in a (111) direction. It is preferable that the seed layer 22 is non-magnetic. By this setup, the crystal orientation of layers including the antiferromagnetic layer 4 to a free magnetic layer 1 is preferentially a (111) plane, the layers become large in crystal grain diameter, and a magnetoresistive effect device of this constitution can be enhanced in resistance change rate.;COPYRIGHT: (C)2001,JPO