Using the Creeping-Boundary in Thin Magnetic Films Form Construction of an Electronic Computer Memory Element

摘要

When a thin magnetic film is subjected to an alternating magnetic field along the hard-magnetization axis and a constant magnetic field along the easy-magnetization axis, the domain boundaries begin to creep at fields much lower than the critical fields required for domain shifting. The following method of constructing storage devices is suggested: magnetic films are deployed in the form of a rectangular matrix with their easy axes directed along numeral trunks and their hard axes, along digit trunks. A nondestructive sensing the information recorded on an uniaxial-anisotropy film by a transverse field is possible. The threshold field required for magnetic-creep switching is inversely dependent on the switching-pulse duration. (Author)