首页> 外国专利> TiN-BASED THIN FILM AND FILM-FORMING METHOD THEREFOR, FILM-FORMING APPARATUS, FILM STRUCTURAL BODY INCLUDING TiN-BASED THIN FILM AND MANUFACTURING METHOD THEREFOR, AND SEMICONDUCTOR DEVICE

TiN-BASED THIN FILM AND FILM-FORMING METHOD THEREFOR, FILM-FORMING APPARATUS, FILM STRUCTURAL BODY INCLUDING TiN-BASED THIN FILM AND MANUFACTURING METHOD THEREFOR, AND SEMICONDUCTOR DEVICE

机译：基于TiN的薄膜及其成膜方法，成膜设备，包括基于TiN的薄膜的膜结构体及其制造方法，以及半导体装置

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摘要

PROBLEM TO BE SOLVED: To provide a TiN-based thin film whose barrier property is higher than that of a TiN film formed by the conventional CVD method and its film forming method as well as a TiN-based thin film, whose resistance is lower than that of a TiN film formed by the conventional method, and to provide its film-forming method.;SOLUTION: A TiN-based thin film containing Ti, O and N or a TiN-based thin film containing Ti, N and P is formed by the CVD method.;COPYRIGHT: (C)2001,JPO

机译：解决的问题：提供一种阻隔性高于通过常规CVD方法及其成膜方法形成的TiN膜的阻隔性的TiN基薄膜，以及一种其电阻值低于其的TiN基薄膜。解决方案：形成包含Ti，O和N的TiN基薄膜或包含Ti，N和P的TiN基薄膜CVD方法。;版权：（C）2001，日本特许厅

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公开/公告号JP2001156024A

专利类型
公开/公告日2001-06-08

原文格式PDF
申请/专利权人 TOKYO ELECTRON LTD;
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申请/专利号JP20000254544
发明设计人 OTSUKI HAYASHI;
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申请日2000-08-24
分类号H01L21/285;C23C16/34;H01L21/3205;H01L21/768;H01L27/04;H01L21/822;H01L27/108;H01L21/8242;
国家 JP
入库时间 2022-08-22 01:27:04

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