SEMICONDUCTOR DEVICE COMBINING THE ADVANTAGES OF MASSIVE AND SOI ARCHITECTURE, AND METHOD FOR MAKING SAME

摘要

The invention concerns a semiconductor device comprises a silicon body (10) wherein are formed source and drain regions (23, 24) defining between them a channel region, a thin gate dielectric layer (14) on the channel region and a gate (15) on the thin gate dielectric layer, a buried layer of dielectric material (22) extending between the source and drain regions (23, 24) and a thin silicon layer (13) extending between the source and drain regions and included between the buried dielectric material layer (22) and the gate dielectric layer (14). The invention is characterised in that said thin silicon layer (13) has an area greater than that of the gate dielectric layer (4) such that its upper surface comprises two opposite zones (13) extending beyond the gate dielectric layer (4) and the source and drain regions (8, 9) each respectively overlapping, at least partly, one of said opposite zones (13a). The invention is applicable to transistors.