SEMICONDUCTOR DEVICE COMBINING THE ADVANTAGES OF MASSIVE AND SOI ARCHITECTURE, AND METHOD FOR MAKING SAME

摘要

A semiconductor device, having source/drain regions (23, 24) covering opposite silicon thin film end zones (13a) extending beyond an overlying gate dielectric layer (14), is new. A semiconductor device has a channel region defined between source and drain regions (23, 24) in a silicon body (10), a gate (15) on a gate dielectric thin film (14) above the channel region, a buried dielectric layer (22) and a silicon thin film (13) extending between the source and drain regions and contained between the buried dielectric layer (22) and the gate dielectric layer (14). The novelty is that the silicon thin film (13) has an area greater than that of the gate dielectric layer (14) so that its upper surface has two opposite zones (13a) which extend beyond the gate dielectric layer (14), the source and drain regions (23, 24) covering respective opposite zones (13a). An Independent claim is also included for production of the above device.