NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME VOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME AND SEMICONDUCTOR MEMORY DEVICE INCORPORATING THE NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE WITH THE VOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THEREOF

摘要

The present invention discloses a novel structure of a nonvolatile semiconductor memory device capable of storing a plurality of bits of information. The nonvolatile semiconductor memory device according to the present invention has a charge storage layer 4 for accumulating electrons at the ends of the gate electrodes. The nonvolatile semiconductor memory device according to the present invention stores electrons in the charge storage layer 4, thereby storing a plurality of bits of information.