首页> 外国专利> SEMICONDUCTOR DEVICE HAVING FUNCTION FOR PREVENTING MOISTURE FROM PENETRATING FUSE PART AND MANUFACTURING METHOD OF FUSE PART

SEMICONDUCTOR DEVICE HAVING FUNCTION FOR PREVENTING MOISTURE FROM PENETRATING FUSE PART AND MANUFACTURING METHOD OF FUSE PART

机译:具有防止熔断部件渗透水分的功能的半导体装置及熔断部件的制造方法

摘要

PURPOSE: A semiconductor device having a function for preventing moisture from penetrating to a fuse part is provided to effectively prevent moisture from penetrating through an interface between interlayer dielectric, by forming a guard ring with an uppermost interconnection metal composed of a multilayered metal interconnection and a passivation layer. CONSTITUTION: A guard ring(142') is a ring shape surrounding a fuse opening part(A), and prevents impurities from penetrating from the fuse opening part. An etch stop layer(134') is formed under at least the guard ring of a fuse line(124). A plurality of interlayer dielectrics is formed on the entire surface located on the etch stop layer, and the guard ring and the fuse opening part are formed in the interlayer dielectrics. A passivation layer(144) is formed on the entire substrate including the guard ring and the plurality of interlayer dielectrics, and exposes the fuse opening part. The guard ring is vertically extended from the etch stop layer to an uppermost interconnection region of a multilayered metal interconnection.
机译:目的:提供一种具有防止水分渗透到熔丝部分中的功能的半导体器件,以通过用由多层金属互连件和多层金属互连件构成的最上层互连金属形成保护环来有效地防止水分穿过层间电介质之间的界面渗透。钝化层。组成:保护环(142')是围绕保险丝开口部分(A)的环形,可防止杂质从保险丝开口部分渗入。至少在熔丝线(124)的保护环下方形成蚀刻停止层(134')。在位于蚀刻停止层上的整个表面上形成多个层间电介质,并且在层间电介质中形成保护环和熔丝开口部。钝化层(144)形成在包括保护环和多个层间电介质的整个基板上,并露出熔丝开口部分。保护环从蚀刻停止层垂直延伸到多层金属互连的最上互连区域。

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