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NITROGEN SOURCE FOR DEPOSITING ORGANIC METAL INCLUDING TRIAZENE DERIVATIVE OR TETRAZENE DERIVATIVE AND NITRIDE SEMICONDUCTOR DEVICE INCLUDING NITRIDE LAYER USING THE SAME
NITROGEN SOURCE FOR DEPOSITING ORGANIC METAL INCLUDING TRIAZENE DERIVATIVE OR TETRAZENE DERIVATIVE AND NITRIDE SEMICONDUCTOR DEVICE INCLUDING NITRIDE LAYER USING THE SAME
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机译:用于沉积有机金属的氮源,包括三氮衍生物或四氮衍生物以及包括氮化层的氮化物半导体器件
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摘要
PURPOSE: A nitrogen source for depositing an organic metal including a triazene derivative or tetrazene derivative is provided to improve energy efficiency by making nitrogen within a temperature range from 600 to 800 deg.C to form a nitride layer of an excellent crystal at a low temperature. CONSTITUTION: A nitrogen source for depositing an organic metal is composed of a triazene derivative or tetrazene derivative in which at least one hydrogen of triazene or tetrazene is replaced by a dimethylamine radical. A nitride semiconductor device includes a nitride layer formed by receiving nitrogen from the nitrogen source for depositing the organic metal.
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