NITROGEN SOURCE FOR DEPOSITING ORGANIC METAL INCLUDING TRIAZENE DERIVATIVE OR TETRAZENE DERIVATIVE AND NITRIDE SEMICONDUCTOR DEVICE INCLUDING NITRIDE LAYER USING THE SAME

摘要

PURPOSE: A nitrogen source for depositing an organic metal including a triazene derivative or tetrazene derivative is provided to improve energy efficiency by making nitrogen within a temperature range from 600 to 800 deg.C to form a nitride layer of an excellent crystal at a low temperature. CONSTITUTION: A nitrogen source for depositing an organic metal is composed of a triazene derivative or tetrazene derivative in which at least one hydrogen of triazene or tetrazene is replaced by a dimethylamine radical. A nitride semiconductor device includes a nitride layer formed by receiving nitrogen from the nitrogen source for depositing the organic metal.