首页> 外国专利> NITROGEN SOURCE FOR DEPOSITING ORGANIC METAL INCLUDING TRIAZENE DERIVATIVE OR TETRAZENE DERIVATIVE AND NITRIDE SEMICONDUCTOR DEVICE INCLUDING NITRIDE LAYER USING THE SAME

NITROGEN SOURCE FOR DEPOSITING ORGANIC METAL INCLUDING TRIAZENE DERIVATIVE OR TETRAZENE DERIVATIVE AND NITRIDE SEMICONDUCTOR DEVICE INCLUDING NITRIDE LAYER USING THE SAME

机译:用于沉积有机金属的氮源,包括三氮衍生物或四氮衍生物以及包括氮化层的氮化物半导体器件

摘要

PURPOSE: A nitrogen source for depositing an organic metal including a triazene derivative or tetrazene derivative is provided to improve energy efficiency by making nitrogen within a temperature range from 600 to 800 deg.C to form a nitride layer of an excellent crystal at a low temperature. CONSTITUTION: A nitrogen source for depositing an organic metal is composed of a triazene derivative or tetrazene derivative in which at least one hydrogen of triazene or tetrazene is replaced by a dimethylamine radical. A nitride semiconductor device includes a nitride layer formed by receiving nitrogen from the nitrogen source for depositing the organic metal.
机译:目的:提供氮源以沉积包括三氮烯衍生物或四氮烯衍生物的有机金属,以通过在600至800℃的温度范围内使氮处于低温下以形成优良晶体的氮化物层来提高能源效率。 。组成:用于沉积有机金属的氮源由三氮烯衍生物或四氮烯衍生物组成,其中三氮烯或四氮烯的至少一个氢被二甲胺基取代。氮化物半导体器件包括通过从氮源接收氮以形成有机金属而形成的氮化物层。

著录项

  • 公开/公告号KR20010046264A

    专利类型

  • 公开/公告日2001-06-15

    原文格式PDF

  • 申请/专利权人 LG ELECTRONICS INC.;

    申请/专利号KR19990049970

  • 发明设计人 SHIN JONG EON;

    申请日1999-11-11

  • 分类号H01L33/00;

  • 国家 KR

  • 入库时间 2022-08-22 01:13:33

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号