Metal organics source comprising triazene derivatives or tetrazene derivatives and nitride semiconductor device containing nitride film manufactured by the same

摘要

The nitride semiconductor device of the present invention includes a tree ahjen or tetra Zen nitride film formed accepted H is optionally substituted with one or more of dimethyl amine radical tree ahjen derivative or a tetrahydro wear organic metal vapor deposition, including Xen derivatives nitrogen source and supplying nitrogen therefrom in a relate to. The nitrogen source of the present invention may be advantageously N at a temperature of 600 to 800 ℃ can provide good crystalline nitride film at a low temperature.