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Metal nitride film, semiconductor device using the metal nitride film, and manufacturing method of semiconductor device
Metal nitride film, semiconductor device using the metal nitride film, and manufacturing method of semiconductor device
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机译：金属氮化物膜，使用该金属氮化物膜的半导体装置以及半导体装置的制造方法
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摘要
The present invention provides a metal nitride film that realizes an intended effective work function (for example, a high effective work function) and has EOT exhibiting no change or a reduced change, a semiconductor device using the metal nitride film, and a manufacturing method of the semiconductor device. The metal nitride film according to an embodiment of the present invention contains Ti, Al and N, wherein the metal nitride film has such molar fractions of Ti, Al and N as (N/(Ti+Al+N)) of 0.53 or more, (Ti/(Ti+Al+N)) of 0.32 or less, and (Al/(Ti+Al+N)) of 0.15 or less.
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机译：本发明提供了一种实现预期的有效功函数（例如，高有效功函数）并且具有无变化或减少变化的EOT的金属氮化物膜，使用该金属氮化物膜的半导体器件及其制造方法。半导体器件。根据本发明实施方式的金属氮化物膜包含Ti，Al和N，其中所述金属氮化物膜的Ti，Al和N的摩尔分数为（N /（Ti + Al + N））为0.53以上。 ，（Ti /（Ti + Al + N））为0.32以下，（Al /（Ti + Al + N））为0.15以下。
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