首页> 外国专利> device for measuring amount of gas from photoresist for ion implantation process and method for controlling ion implantation process using the same

device for measuring amount of gas from photoresist for ion implantation process and method for controlling ion implantation process using the same

机译:用于测量来自光致抗蚀剂的离子注入过程中的气体量的装置以及使用该装置控制离子注入过程的方法

摘要

PURPOSE: An apparatus for measuring gas volume is provided to improve the reliability of the measurement by exactly detecting the gas volume generated from a photoresist using a quantity of the light and a variation of the quantity of the light. CONSTITUTION: In an ion implanter including a wheel(4) set on a wafer(1), a light emitting part(2) is formed at an inner region of the wheel(4). A plurality of light receiving parts(3a,3b,3c) are formed at an outer region of the wheel(4) and spaced from the wheel(4) constantly along the cylindrical direction of the wheel. Since the light emitting part(2) and light receiving parts(3a,3b,3c) are formed at both sides of the wafer(1), the gas volume generated from the photoresist is calculated by the quantity of the light detected from the light receiving parts.
机译:目的:提供一种用于测量气体量的装置,以通过使用光量和光量的变化精确地检测从光致抗蚀剂产生的气体量来提高测量的可靠性。构成:在包括放置在晶片(1)上的轮子(4)的离子注入机中,发光部分(2)形成在轮子(4)的内部区域。多个光接收部分(3a,3b,3c)形成在轮(4)的外部区域,并且沿着轮的圆柱方向恒定地与轮(4)间隔开。由于在晶片(1)的两面形成有发光部(2)和受光部(3a,3b,3c),因此根据从光检测到的光量来计算从光致抗蚀剂产生的气体量。接收零件。

著录项

  • 公开/公告号KR20010090372A

    专利类型

  • 公开/公告日2001-10-18

    原文格式PDF

  • 申请/专利权人 HYNIX SEMICONDUCTOR INC.;

    申请/专利号KR20000015297

  • 发明设计人 MUN HO SEONG;

    申请日2000-03-25

  • 分类号H01L21/265;

  • 国家 KR

  • 入库时间 2022-08-22 01:12:48

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号