Characterization of UV6 photoresist stabilization and implant masking for exclusive implementation in 180 nm device processing

机译：UV6光致抗蚀剂稳定化和注入掩膜的特性可在180 nm器件处理中独家实施

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As design rules dip below 180 nm, DUV scanners are used at all critical levels with overlay requirements approaching 50 nm. OVerlay specifications are typically 30

机译：当设计规则降至180 nm以下时，DUV扫描仪可用于所有关键级别，覆盖要求接近50 nm。 OVerlay规格通常为30

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来源
《Conference on advances in resist technology and processing》|2000年|p.771-781|共11页
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作者
Patrick S.Lysaght; Billy Nguyen; Gennadi Bersuker;
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原文格式 PDF
正文语种
中图分类无线电电子学、电信技术;
关键词
UV6; i-line; mix-and-match; photostabilization; implant mask; outgassing; ashing;

机译：UV6; i-line;连连看;光稳定化;植入面罩放气灰化;

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专利

1. Photoresists used as mask materials in ion implantation for the CMOS technology: optimizing mask thickness [J] . S. V. Granko, F. F. Komarov, A. V. Leontev Russian Microelectronics . 2002,第4期

机译：光刻胶在CMOS技术的离子注入中用作掩模材料：优化掩模厚度
2. Integrated process of photoresist trimming and dielectric hard mask etching for sub-50 nm gate patterning [J] . Vladimir Bliznetsov, Rakesh Kumar, Huizhen Lin, Thin Solid Films . 2006,第1a2期

机译：光刻胶修整和介电硬掩模蚀刻的集成工艺，用于低于50 nm的栅极构图
3. Novel Ion Implantation Process with High Heat Resistant Photoresist in Silicon Carbide Device Fabrication [J] . Takenori Fujiwara, Yugo Tanigaki, Yukihiro Furukawa Journal of Photopolymer Science and Technology . 2014,第2期

机译：碳化硅器件制造中高耐热光刻胶的离子注入新工艺
4. Dry Strip Process Technology for Removal of Heavily Implanted Photoresist For 180nm Technology and Beyond [C] . Qingyuan Han, Teresa Bausum, Palani Sakthivel, SEMICON China 2003 Technology Symposium: Technical Programs for the Semiconductor Equipment and Materials Industries . 2003

机译：干式剥离工艺技术，用于去除180nm及以后的大量注入的光刻胶
5. Oxidative removal of implanted photoresists and barrier metals in semiconductor processing [D] . Govindarajan, Rajkumar 2012

机译：在半导体工艺中氧化去除注入的光刻胶和势垒金属
6. Hard-Baked Photoresist as a Sacrificial Layer for Sub-180 °C Surface Micromachining Processes [O] . Hani H. Tawfik, Mohannad Y. Elsayed, Frederic Nabki, 2018

机译：硬质光刻胶作为180°C以下表面微加工工艺的牺牲层
7. Novel Ion Implantation Process with High Heat Resistant Photoresist in Silicon Carbide Device Fabrication [O] . Takanori Fujiwara, Yugo Tanigaki, Yukihiro Furukawa, 2014

机译：具有高耐热光致抗蚀剂的新型离子注入工艺，碳化硅器件制造

Characterization of UV6 photoresist stabilization and implant masking for exclusive implementation in 180 nm device processing

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