首页> 外国专利> Etching Apparatus for Flattening Both Surfaces of Semiconductor Wafer and Surface Flattening Method Using the Same

Etching Apparatus for Flattening Both Surfaces of Semiconductor Wafer and Surface Flattening Method Using the Same

机译:用于平坦化半导体晶片的两个表面的蚀刻装置和使用该装置的表面平坦化方法

摘要

PURPOSE: An etching device for planarizing a surface of a semiconductor wafer and an etching apparatus using the same are provided to improve total thickness variation of a surface of a semiconductor wafer by using a bubble system. CONSTITUTION: An etching bath(42) for etching a wafer is installed in a housing(41). A rinse bath(41) for removing an etchant from a surface of the wafer is installed in the housing(41). A multitude of wafer is mounted in a barrel(15). Both shafts of the barrel(15) are connected with one end portion of a robot arm(40). A driving device(45) is moved by a cylinder(46). The other end portion of the robot arm(40) is rotated by the driving device(45). A circulation tank(44) is connected with the etching bath(42) through an etchant supply line(43). The barrel(15) is moved to an inside of the etching bath(42) by the robot arm(40). The wafer is rotated by a driving motor. A surface of the wafer is flattened by an etchant. The barrel(15) is moved to the rinse bath(41) by the robot arm(40). A flow rate control valve and a flow meter are installed at the etchant supply line(43).
机译:用途:提供一种用于平坦化半导体晶片的表面的蚀刻装置和使用该蚀刻装置的蚀刻装置,以通过使用气泡系统来改善半导体晶片的表面的总厚度变化。构成:用于蚀刻晶片的蚀刻槽(42)安装在外壳(41)中。用于从晶片表面去除蚀刻剂的冲洗槽(41)安装在壳体(41)中。多个晶片被安装在机筒(15)中。枪管(15)的两个轴与机械臂(40)的一个端部连接。驱动装置(45)通过气缸(46)移动。机械臂40的另一端部通过驱动装置45旋转。循环槽(44)通过蚀刻剂供给管线(43)与蚀刻槽(42)连接。机筒(15)通过机械臂(40)移动到蚀刻槽(42)的内部。晶片通过驱动马达旋转。晶片的表面被蚀刻剂弄平。桶(15)通过机械臂(40)移动到漂洗槽(41)。在蚀刻剂供给管线(43)上安装有流量控制阀和流量计。

著录项

  • 公开/公告号KR20010091384A

    专利类型

  • 公开/公告日2001-10-23

    原文格式PDF

  • 申请/专利权人 NEOSEMITECH INC.;

    申请/专利号KR20000013027

  • 发明设计人 KANG UNG SIK;

    申请日2000-03-15

  • 分类号H01L21/306;

  • 国家 KR

  • 入库时间 2022-08-22 01:12:48

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