Charge pump circuit capable of generating constant voltage and negative voltage and nonvolatile semiconductor memory device comprising the same

摘要

The output nodes Noutn and Noutp respectively outputting the negative potential VN and the potential potential VPS are supplied with a fixed potential by the reset circuits 52 and 70 when not in use. When the potential is generated, the switches SW2 and SW3 are turned on, and when the potential is generated, the switches SW1 and SW4 are turned on. The reference potential of the generated potential is provided to the internal nodes N10 and N20 through the switches SW1 and SW3, respectively. By using the polydiode element in the voltage generator 53, a charge pump circuit capable of generating positive voltage can be realized without greatly changing the manufacturing method.