首页> 中文期刊> 《微处理机》 >基于dikson charge pump的voltage doubler设计

基于dikson charge pump的voltage doubler设计

         

摘要

With the development of IC technology, supply voltage for IC system has been decreasing making the charge pump become more and more important. Traditional voltage doubler can not have a 2VDD voltage output because the threshold voltage of MOSFET. This paper analyses the working principle of the dikson charge pump, and therefore introduces a new voltage doubler based on dikson charge pump.By adding capacitance, the output voltage of the dikson charge pump can be adjusted subtly. Through simulation, by using smic0.35μm technology,traditional voltage doubler has a 8.54V output comparing the dikson charge pump's 10V output.%随着集成电路工艺的发展,电源电压不断降低,使得charge pump在芯片上的地位更加重要.传统的voltage doubler基于开关的实现方法,由于MOS管阈值电压的影响,使得voltagedoubler的输出电压与2VDD电平相差甚远.在分析dikson charge pump工作原理的基础上,提出了一种新型的基于dikson charge pump的voltage doubler,通过外加电容的方法,可以实现对diksoncharge pump的输出电压进行微调,从而得到所需要的2VDD的电平.采用smic0.35μm工艺仿真后发现当VDD=5V时,传统的voltage doubler输出电平为8.54V,而dikson voltage doubler的输出电平为理想的10V.

著录项

相似文献

  • 中文文献
  • 外文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号