Production of epitaxial layer for dynamic random access memory comprises preparing substrate having single crystalline and insulated regions, growing epitaxial layer on single crystalline region and partially removing epitaxial layer

摘要

Production of an epitaxial layer comprises: preparing substrate (105) having a single crystalline region (107) and an electrically insulated region (108); growing epitaxial layer (245) on the single crystalline region; and partially removing the epitaxial layer. Production of an epitaxial layer comprises: preparing substrate (105) having a single crystalline region (107) and an electrically insulated region (108); growing epitaxial layer (245) on the single crystalline region, in which the electrically insulated region is partially grown laterally by the epitaxial layer and forms an epitaxial closing joint (275); and partially removing the epitaxial layer above the electrically insulated region so that the epitaxial closing joint is partially removed. Preferred Features: The epitaxial layer is removed by anisotropic etching. The single crystalline region consists of silicon and the electrically insulated region consists of silicon oxide.