Process for the epitaxial growth of single crystalline aluminum nitride layers on silicon substrates comprises preparing substrate to form terrace layer, vaporizing an aluminum layer

摘要

Process for the epitaxial growth of single crystalline aluminum nitride layers on silicon substrates having a surface comprises using a Si off-axis substrate (1) whose surface norm (2) is tilted by an angle alpha opposite the direction to the flat diagonal (or additional equivalent directions); preparing the Si (001) off-axis substrate surface at a temperature of more than 1100 deg C so that a terrace structure (4) with an atomic double layer (3) is produced; vaporizing a one to two monolayer thick aluminum layer on the silicon surface before growing the aluminum nitride layer; introducing nitrogen; and increasing the substrate temperature during the epitaxial growth. Preferred Features: The tilting angle alpha is 2-8 deg . The aluminum nitride layer is grown using plasma-supported molecular beam epitaxy.