High Quality Aluminum Nitride Epitaxial Layers Grown on Sapphire Substrates

摘要

In this letter we report the growth of high quality AIN epitaxial layers onsapphire substrates. The AIN grown on (00-1) sapphire exhibited a better crystalline quality than that grown on (01-2) sapphire. An x-ray rocking curve of AIN on (00-1) A12O3 yielded a full width at half-maximum of 97.2 arcsec, which is the narrowest value reported to our knowledge. The AIN peak on (01-2) A12O3 was about 30 times wider. The absorption edge measured by ultraviolet transmission spectroscopy for AIN grown on (00-1) A12O3 was about 197 nm.(Author).