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positive working, fotoempfindliche harzzusammensetzung and halbleiteranordnung with this composition
positive working, fotoempfindliche harzzusammensetzung and halbleiteranordnung with this composition
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机译:正性,光敏树脂组合物和具有该组合物的半导体组件
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摘要
A positive type photosensitive resin composition which comprises (A) 100 parts by weight of a polyamide represented by the general formula (1): CHEM wherein X represents a tetravalent aromatic group; Y represents a divalent aromatic group; Z represents a group represented by the formula: CHEM in which R1 and R2 represent divalent organic groups and R3 and R4 represent monovalent organic groups; a and b represent molar fractions; a + b = 100 mole %; a = 60.0 - 100.0 mole %; b = 0 - 40.0 mole %; and n represents an integer of 2 to 500, (B) 1 to 100 parts by weight of a photosensitive diazoquinone compound and (C) 1 to 50 parts by weight of a phenol compound represented by a specific structural formula and/or (D) 0.1 to 20 parts by weight of an organosilicon compound represented by a specific structural formula; and a semiconductor device in which a pattern of a polybenzoxazole resin obtained by using the above photosensitive resin composition is formed in a thickness of 0.1 to 20 mu m on a semiconductor element.
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机译:一种正型光敏树脂组合物,其包含(A)100重量份的由通式(1)表示的聚酰胺:其中,X代表四价芳族基团; Y代表二价芳族基团; Z表示由下式表示的基团:其中,R1和R2表示二价有机基团,R3和R4表示一价有机基团。 a和b代表摩尔分数; a + b = 100摩尔%; a = 60.0-100.0摩尔%; b = 0-40.0摩尔%; n表示2〜500的整数,(B)1〜100重量份的感光性重氮醌化合物,(C)1〜50重量份的由特定结构式和/或(D)表示的酚化合物。 0.1〜20重量份的由特定结构式表示的有机硅化合物;以及在半导体元件上以0.1〜20μm的厚度形成通过使用上述感光性树脂组合物得到的聚苯并恶唑树脂的图案的半导体装置。
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