p-type semiconductor, method for manufacturing the p-type semiconductor, semiconductor device, photovoltaic element, and method for manufacturing semiconductor device

摘要

A p-type semiconductor composed basically of an Ib-IIIb-VIb. sub.2 group compound semiconductor (especially CuInS.sub.2) which is improved in carrier concentration and has advantages in manufacture and performance. In order to obtain the p-type semiconductor mentioned above, p-type CuInS.sub.2 is formed by adding both P (p-type impurity) and Sn (n- type impurity) to CuInS.sub.2. The carrier concentration of the p- type semiconductor is 510.sup.17 cm.sup.-3 which is larger than the value (510.sup.16 cm.sup.-3) obtained when P and In are added or another value (310.sup.15 cm.sup.-3) obtained when only P is added. A thin film solar cell characterized by a glass substrate (2), an Mo electrode (1), a p-type semiconductor layer (3), an n-type semiconductor layer composed of a CdS layer (4), and an ITO electrode (5) is manufactured by using the CuInS.sub.2 layer containing P and Sn as the p- type semiconductor (3). It is confirmed that the conversion efficiency of the solar battery is as high as 12%.