SiCr thin film resistors having improved temperature coefficients of resistance and sheet resistance

摘要

A process for increasing the sheet resistance and lowering the temperature coefficient of resistance of a thin film resistor deposited on a wafer, the process comprising ramping the temperature of the wafer to an annealing temperature above the decomposition temperature of the thin film resistor using a radiant heat source such that the wafer reaches the annealing temperature within a ramp up time of from about 5 to 10 seconds, and annealing the wafer at the annealing temperature for an annealing period of from about 50 to 85 seconds.