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Very high aspect ratio semiconductor devices using fractal based topologies
Very high aspect ratio semiconductor devices using fractal based topologies
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机译:使用基于分形拓扑的超高纵横比半导体器件
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摘要
A method for utilizing fractal analysis in the design and manufacture of semiconductor structures including transistor devices such as power MOS devices. The method includes using fractal theory to determine optimum source perimeter values to increase aspect ratio. The method is implemented to allow for use of the theoretical values in conjunction with known photolithographic fabrication techniques. The resultant structure thus incorporates the theoretically derived values to approximate a fractal structure.
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