High-frequency semiconductor device provided with peripheral bumps on chip periphery that surround high-frequency semiconductor chip

摘要

A high-frequency semiconductor device includes an interconnection substrate having one surface where a substrate high-frequency circuit including a front ground is formed and the other surface where a back ground is formed. There are peripheral bumps including ground bumps placed on the periphery of a high-frequency semiconductor chip with an interval equal to or less than a first prescribed length to surround the high-frequency semiconductor chip where a chip high-frequency circuit is formed. Conductive through holes are placed in a region of the interconnection substrate separated from a signal line connected to a signal bump of the high-frequency semiconductor chip by the first prescribed length or less and separated from the peripheral bumps by the first prescribed length or less for connecting the front ground and the back ground.