Method and apparatus for semiconductor device simulation with linerly changing quasi-fermi potential, medium storing program for the simulation, and manufacturing method for the semiconductor device

摘要

A semiconductor device simulator having a grid generator, a quasi-Fermi potential setting unit, a bias setting unit, a coefficient matrix and residual vector setting unit and a matrix calculator is disclosed. A grid generator defines a finite number of grid points inside and around a semiconductor device, and generates a plurality of grids. A quasi-Fermi potential setting unit sets said linear quasi-Fermi potentials, which is linearly changing, at each section inside the generated grid. A bias setting unit defines the terminal bias to be applied to predetermined electrode regions. A coefficient matrix and residual vector setting unit obtains carrier concentration inside each grid from the quasi-Fermi potential, and sets coefficient matrix/residual vector for the basic equations. A matrix calculator calculates this coefficient matrix, and accordingly obtains the solution for the Poisson's equation and the carrier continuity equations to obtain the device behavior. Furthermore, the device simulation method, the recording medium storing the program for causing the device simulator to function, and the manufacturing method for the semiconductor device using them are also disclosed.