Semiconductor wafer including a dot mark of a peculiar shape and method of forming the dot mark

摘要

A fine protruded dot-like mark is formed on part of a semiconductor wafer surface. A growth layer is grown by epitaxial treatment on an entire surface of a semiconductor wafer including the dot mark so as to form a dot mark. During this growth process, the dot-like mark is changed into a polygon pyramid shape including a clear ridge line indicating the same azimuth of the crystal axis as that of the wafer. This ridge line is optically read out so that the azimuth of the crystal axis of the wafer can be specified. Therefore, it is possible to obtain a semiconductor wafer including a dot mark having a peculiar shape excellent in optical visibility and indicating the azimuth of the crystal axis and to provide a method of forming the dot mark.