Semiconductor light emitting device having a GaN-based semiconductor layer, method for producing the same and method for forming a GaN-based semiconductor layer

摘要

A method for forming a GaN-based semiconductor layer includes the steps of: forming a ZnO buffer layer on one of a glass substrate and a silicon substrate; and epitaxially growing a GaN-based semiconductor layer on the ZnO buffer layer by using an electron cyclotron resonance-molecular beam-epitaxy (ECR-MBE) method.