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Method of improving the etch resistance of chemically amplified photoresists by introducing silicon after patterning
Method of improving the etch resistance of chemically amplified photoresists by introducing silicon after patterning
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机译:通过在图案化之后引入硅来提高化学放大的光致抗蚀剂的耐蚀刻性的方法
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摘要
A photoresist system is provided that is easily structurable and is suitable for deep ultraviolet range patterning. An increased etching resistance to oxygen-containing plasma is produced in a lithographically generated photoresist structure by treatment with an etch protectant. The etch protectant includes a silylating agent for chemical reaction with reactive groups of the photoresist. In an embodiment, the photoresist includes a base resin initially containing no aromatic groups. Silylating agents include silicon tetrachloride, silicon tetrafluoride, trichlorosilane, dimethylchlorosilane and hexamethyldisilazane.
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