Mechano-chemical polishing of crystals and epitaxial layers of GaN and Ga1-x-yA1xInyN

摘要

This method of removal of irregularities and highly defected regions of the surface of crystals and epitaxial layers of GaN and Ga_{1−x−y}Al_xIn_yN characterized by mechano-chemical polishing on the soft polishing pad under pressure in presence of chemical etching agent of water solution of bases of the total concentration above 0.01N in time longer than 10 seconds after which the agent is replaced by the pure water without interruption of the polishing and polishing by at least 1 minute aid subsequent diminution of the load and stopping of the machine and then the polished GaN crystal or GaAlInN epitaxial layer is removed of the polishing machine and dried in the stream of dry nitrogen.