A dual-band detector, comprising: a semiconductor substrate (13) including a detector device (12) that absorbs incident radiation in a first band of wavelengths of incident radiation; and a microbridge detector level (32) including a sensing element (35) that absorbs incident radiation 3003 י' בכסלו התשס" ב - November 25, 2001 in second band of wavelengths of the incident radiation; and means (36, 38) for coupling a detected signal, in response to the absorbed incident radiation in the second band of wavelengths, from the sensing element to the semiconductor substrate.
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