首页>
外国专利>
A MULTI-STAGE ARSENIC DOPING PROCESS TO ACHIEVE LOW RESISTIVITY IN SILICON CRYSTAL GROWN BY CZOCHRALSKI METHOD
A MULTI-STAGE ARSENIC DOPING PROCESS TO ACHIEVE LOW RESISTIVITY IN SILICON CRYSTAL GROWN BY CZOCHRALSKI METHOD
展开▼
机译:Czochralski法实现硅晶体低电阻率的多阶段砷掺杂工艺
展开▼
页面导航
摘要
著录项
相似文献
摘要
A method of lowering the resistivity of resultant siliconcrystal from a Czochralski crystal growing process by addingarsenic dopant to the melt in multiple stages.
展开▼