首页>
外国专利>
A MULTI-STAGE ARSENIC DOPING PROCESS TO ACHIEVE LOW RESISTIVITY IN SILICON CRYSTAL GROWN BY CZOCHRALSKI METHOD
A MULTI-STAGE ARSENIC DOPING PROCESS TO ACHIEVE LOW RESISTIVITY IN SILICON CRYSTAL GROWN BY CZOCHRALSKI METHOD
展开▼
机译：Czochralski法实现硅晶体低电阻率的多阶段砷掺杂工艺
展开▼
页面导航
摘要
著录项
相似文献
摘要
The present invention is directed to the addition of the arsenic dopant in the melt (melt) in multiple stages by lowering the resistivity of the silicon single crystal resulting from the Czochralski crystal growth process.
展开▼
