New approaches for high doping and high crystal fraction in the mixed phase nano-crystal silicon thin film with low angle laterally grown grain by near room temperature deposition process with neutral beam assisted CVD

摘要

The NBaCVD system can control the crystalline phase and the doping efficiency simultaneously by the energy of impinge neutral particles. During the deposition process, energetic H-neutral atoms transport their energy to the surface of depositing film to enhance crystallization (crystal volume fraction (Xc) ∼85%) and dopant activation (∼1∗10²⁰ #/cm³, ∼30 cm²/Vs) with low H ratio at near room temperature on the substrate. Also the increase of H enhance transport path (mobility incensement) which is deduced from transition of crystal orientation from [111] to [311] at constant Xc. The various analysis data of the thin films (CAFM, GIWAXS) represent the evidence of obvious flat-type nc embedded pm phase, and grain dominant charge transport characteristics.