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Thermal stress absorbing interface structure and wafer level package using the same and method for manufacturing the same

机译:吸收热应力的界面结构和使用该界面结构的晶片级封装及其制造方法

摘要

PURPOSE: A thermal stress absorption structure, a wafer level package using the same, and a method for fabricating the same are provided to enhance reliability of connection between a chip and a substrate by improving a design of a wafer level package. CONSTITUTION: A thermal stress absorption interface structure(20) is arranged between a semiconductor IC(Integrated Circuit) chip and a surface mounted structure. The thermal stress absorption interface structure(20) has a structure of a flat multi-layer. The thermal stress absorption interface structure(20) includes the first polymer layer(26) and the second polymer layer(28). The second polymer layer(28) is formed on a whole surface of the first polymer layer(26) in order to absorb thermal stress. The first polymer layer(26) has an elliptical shape. The first and second polymer layers(26,28) have different moduli of elasticity. The thermal stress absorption interface structure(20) has a conductive bump pad(30) and a side portion. The conductive bump pad(30) has the first end portion(32) and the second end portion(34). A conductive bump(21) is formed on the conductive bump pad(30).
机译:目的:提供一种热应力吸收结构,使用该结构的晶片级封装及其制造方法,以通过改进晶片级封装的设计来增强芯片与基板之间的连接可靠性。组成:一个热应力吸收界面结构(20)布置在半导体IC(集成电路)芯片和表面安装结构之间。热应力吸收界面结构(20)具有平坦的多层结构。热应力吸收界面结构(20)包括第一聚合物层(26)和第二聚合物层(28)。为了吸收热应力,在第一聚合物层(26)的整个表面上形成第二聚合物层(28)。第一聚合物层(26)具有椭圆形状。第一和第二聚合物层(26,28)具有不同的弹性模量。热应力吸收界面结构(20)具有导电凸块焊盘(30)和侧部。导电凸块焊盘(30)具有第一端部(32)和第二端部(34)。在导电凸块焊盘(30)上形成有导电凸块(21)。

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