Etching method of material fim formed on semiconductor wafer using surface wave coupled plasma etching apparatus

摘要

The present invention provides a method for etching material film on the semiconductor wafer loaded into the reaction chamber of a surface wave plasma etching apparatus having a glass plate for delivering wave in insulating plate and a lower portion capable of generating a surface wave by microwave. The method has a high ion density to generate a surface wave plasma of argon or xenon, which comprises a large mass ions then quickly warmed up to the glass plate to etch the film material. Accordingly, the present invention can significantly reduce the warm-up time of the glass plate, and can not use the etching gas to reduce damage to the glass sheet. Further, the present invention can suppress the generation of the polymer on a glass plate to improve the etching efficiency and suppress the etching defects.