HIGH-DENSITY NOR-TYPE FLASH MEMORY DEVICE AND A PROGRAMMING METHOD THEREOF

摘要

This method according to the program of the flash memory device is started, first, the flash memory cells are selected in accordance with the word / byte unit in the flash memory cells of the memory cell array. Then, the selected memory cells are programmed in sequence to a predetermined threshold voltage is lower than the target threshold voltage. Then, the selected flash memory cells are divided in a threshold voltage of said predetermined groups of the said target at the same time to the threshold voltage or the flash memory cell are programmed in sequence. According to the program algorithm, even if the density of the flash memory device increases it is possible to supply a sufficient amount of current required for the charge pump circuit integrated circuit without increasing the program size of the die due to.