HIGH-DENSITY NOR-TYPE FLASH MEMORY DEVICE AND A PROGRAMMING METHOD THEREOF

摘要

This method according to the program of the flash memory device is started, first, the program data bits are bits of the data program operation of the program supplied from the outside is carried out. Then, prior to a program operation of the data bits to be completed, the current program is a program operation of the program data bits of the data bit to be programmed in the following is performed. According to the program algorithm, it is possible to supply a sufficient amount of current required for even if the density of the flash memory device increases the charge pump circuit integrated circuit without increasing the program size of the die due to.