FERROELECTRIC MEMORY DEVICE BE CAPABLE OF MEASURING HYSTERESIS CHARACTERISTIC OF FERROELECTRIC CAPACITOR

摘要

An object of the present invention is to provide a ferroelectric memory device, the measurement is possible for the hysteresis characteristics of the ferroelectric capacitor having a small capacitance when the test of the ferroelectric memory device, according to an aspect of the invention, a plurality of word lines and a plurality of forward / in the ferroelectric memory device of sub-bit lines are crossed with each other with a ferroelectric memory array in which the array of a plurality of unit memory cell comprising a forms a matrix form, at least one ferroelectric capacitor and a switching element, the address signal, the externally applied mode global plate driving means in response to a select signal and an input voltage to drive the global plate line to the plate line of the unit memory cell; Switching means for switching the forward / reverse signal of the data bus line is associated with the positive / negative bit lines of a selected unit memory cell in response to the mode selection signal; Integrating means for integrating the output of said switching means; And provide a ferroelectric memory device for measuring the hysteresis characteristic for the ferroelectric capacitor of the unit memory cell is selected, and includes a source follower for generating an output voltage by buffering the output of the integrating means, based on the input voltage and the output voltage do.