METHOD OF MATERIAL LAYER CAPABLE OF INCRESING DEPOSITON RATE OF NOBLE METAL LAYER ON FERROELECTRIC LAYER, METHOD OF MANUFACTURING FERROELECTRIC CAPACITOR USING THE SAME, FERROELECTRIC CAPACITOR FORMED USING THE SAME, SEMICONDUCTOR MEMORY DEVICE COMPRISING FERROELECTRIC CAPACITOR AND METHOD OF MANUFACTURING THE SAME

摘要

A method for manufacturing a material layer capable of increasing the deposition rate of a noble metal layer on a ferroelectric layer, a method for manufacturing a ferroelectric capacitor using the same, a semiconductor memory device having the ferroelectric capacitor, and a manufacturing method thereof are provided to increase electrostatic capacity of the ferroelectric capacitor by forming an upper electrode on a ferroelectric substance. A lower electrode(88) is formed. A ferroelectric layer(90) is formed on the lower electrode. The ferroelectric layer is exposed to a seed plasma. An upper electrode(92) is formed on a section of the ferroelectric layer exposed to the seed plasma. The upper electrode includes a source material of the seed plasma. The lower electrode is formed on a substrate where a trench having predetermined depth and width is formed, thereby covering a sidewall and a bottom of the trench. The width of the trench is narrower than 0.39 mum.