首页> 外国专利> / SEMICONDUCTOR MEMORY DEVICE HAVING DATA PARALLEL/SERIAL CONVERSION FUNCTION AND CAPABLE OF EFFICIENTLY PERFORMING OPERATIONAL TEST

/ SEMICONDUCTOR MEMORY DEVICE HAVING DATA PARALLEL/SERIAL CONVERSION FUNCTION AND CAPABLE OF EFFICIENTLY PERFORMING OPERATIONAL TEST

机译:/具有数据并行/串行转换功能且能够有效执行操作测试的半导体存储器

摘要

The semiconductor memory device 110 according to the present invention includes a memory core unit 20, a test mode control circuit 200 for transferring data output from the memory core unit 20 to the internal nodes N0 to Nn. And a data input / output control circuit 40 for serially inputting and outputting a plurality of parallel data input and output to each of the internal nodes N0 to Nn at each of the data nodes Nd0 to Ndn. The test mode control circuit 200 transfers the read data from the memory core unit 20 as it is to the internal nodes N0 to Nn in the normal read operation, and outputs it from the memory core unit 20 in the test mode. Compressed data is applied to the data at predetermined units and transferred to the internal nodes N0 to Nn.;Therefore, in the test mode, the test mode compressed for each predetermined unit can be input and output using fewer test nodes than in the normal operation.
机译:根据本发明的半导体存储器件110包括存储核心单元20,测试模式控制电路200,测试模式控制电路200用于将从存储核心单元20输​​出的数据传输到内部节点N0至Nn。数据输入/输出控制电路40,用于在每个数据节点Nd0至Ndn处串行输入和输出输入至内部节点N0至Nn的多个并行数据。测试模式控制电路200在正常读取操作中将来自存储核心单元20的读取数据按原样传送到内部节点N0至Nn,并在测试模式下从存储核心单元20输​​出。压缩数据以预定单位应用于数据并传输到内部节点N0至Nn。因此,在测试模式下,可以使用比正常操作更少的测试节点输入和输出针对每个预定单位压缩的测试模式。

著录项

  • 公开/公告号KR100358622B1

    专利类型

  • 公开/公告日2002-10-25

    原文格式PDF

  • 申请/专利权人 미쓰비시덴키 가부시키가이샤;

    申请/专利号KR20000074594

  • 发明设计人 츠쿠데마사키;

    申请日2000-12-08

  • 分类号G11C29/00;

  • 国家 KR

  • 入库时间 2022-08-22 00:29:22

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