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New silylalkylborane compounds, useful for the production of ceramic powder, are prepared by reaction of a silane with a metal in an aprotic solvent followed by reaction with a borane compound
New silylalkylborane compounds, useful for the production of ceramic powder, are prepared by reaction of a silane with a metal in an aprotic solvent followed by reaction with a borane compound
New silylalkylborane compounds are prepared by reaction of a silane with a metal at less than 50 [deg]C in an aprotic solvent to form a further silane which is then reacted with a borane at below 50 [deg]C. New silylalkylborane compounds of formula (1) are prepared by reaction of a silane of formula (2) with a metal, M, at less than 50 [deg]C in an aprotic solvent to form a silane of formula (3) which is then reacted with a borane of formula (4) at below 50 [deg]C. (R) 3Si-C(R 1)(R 2)-B(R) 2 (1) (R 3)Si-C(R 1)(R 2)-X (2) (R) 3Si-C(R 1)(R 2)-M(X) w (3) Y-B(R) 2 (4) R : 1-20C hydrocarbon, H, halogen, NR'R'' or OR'; R', R'' : H or 1-20C hydrocarbon; R 1, R 2H, halogen, 1-20C hydrocarbon, NR'R'' or OR'; X : halogen; M : metal; Y : halogen, NR'R'' or OR' Independent claims are also included for the following: (i) a process for the production of a compound of formula (5) by reaction of a compound of formula (6) with elemental halogen or an organic acid halide; (ii) a silylalkylborazine of formula (7) prepared by reaction of a silylalkylborane of formula (1) with an amine N(R 4) 3 or ammonium salt HN(R 4) 3 +; (iii) oligo or polycarbosilazanes, prepared from a compound of formula (1) or a compound of formula (7), having a structural unit of formula (8); (iv) a silicon-boron-carbonitride ceramic having N-Si-C-B-N structural units prepared by pyrolysis of an oligo- or polyborocarbosilazane or silylalkylborazine of formula (7) in an inert or ammonia-containing atmosphere at -200 to +2000 [deg]C followed by calcining in an inert or ammonia-containing atmosphere at 800-2000 [deg]C; (v) a composite ceramic containing dispersed SiC, Si 3N 4, BN, C and/or B 4C prepared by heating a siliconboroncarbonitride ceramic at above 1400 [deg]C. (R) 3Si-C(R 1)(R 2)-B(X) 2 (5) (R) 3Si-C(R 1)(R 2)-B(OR')(OR'') (6) [Image] R 3H, halogen, N(R')(R'') or OR'; R 4R', Sn(R *) 3 or Si(R *) 3; R *R 2 or 1-20C hydrocarbon. [Image].
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机译:通过使硅烷与金属在非质子溶剂中在小于50℃下反应以形成另外的硅烷,然后在低于50℃下与硼烷反应来制备新的甲硅烷基烷基硼烷化合物。通过使式(2)的硅烷与金属M在非质子溶剂中在小于50℃下反应以形成式(3)的硅烷,来制备式(1)的新的甲硅烷基烷基硼烷化合物。在低于50℃下与式(4)的硼烷反应。 (R)3Si-C(R 1>)(R 2>)-B(R)2(1)(R 3)Si-C(R 1>)(R 2>)-X(2)(R) 3Si-C(R 1>)(R 2>)-M(X)w(3)YB(R)2(4)R:1-20C烃,H,卤素,NR'R''或OR'; R',R”:H或1-20C烃; R 1>,R 2> H,卤素,1-20C烃,NR'R''或OR'; X:卤素; M:金属; Y:卤素,NR'R''或OR',还包括以下方面的独立权利要求:(i)通过使式(6)化合物与元素卤素反应制备式(5)化合物的方法或有机酰卤; (ii)通过使式(1)的甲硅烷基烷基硼烷与胺N(R 4>)3或铵盐HN(R 4>)3 +>反应制备的式(7)的甲硅烷基烷基硼嗪; (iii)由式(1)的化合物或式(7)的化合物制备的具有式(8)的结构单元的低聚或聚碳碳氮烷; (iv)具有N-Si-CBN结构单元的硅-硼-碳氮化物陶瓷,其通过在惰性或含氨的气氛中于-200至+2000 [deg然后在惰性或含氨气氛中在800-2000℃下煅烧。 (v)包含分散的SiC,Si 3N 4,BN,C和/或B 4C的复合陶瓷,所述复合陶瓷通过在1400℃以上加热碳氮化硼硅陶瓷而制备。 (R)3Si-C(R 1>)(R 2>)-B(X)2(5)(R)3Si-C(R 1>)(R 2>)-B(OR')(OR' ')(6)[图像] R 3> H,卤素,N(R')(R'')或OR'; R 4> R',Sn(R *>)3或Si(R *>)3; R *> R 2>或1-20C的烃。 [图片]。
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