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Semiconductor device e.g. MOSFET has gate insulating film consisting of deuterium atom content silicon nitride film and silicon oxide film
Semiconductor device e.g. MOSFET has gate insulating film consisting of deuterium atom content silicon nitride film and silicon oxide film
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机译:半导体器件MOSFET具有由氘原子含量的氮化硅膜和氧化硅膜组成的栅极绝缘膜
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摘要
The gate insulating film is constituted by deuterium atom content silicon nitride film and silicon oxide film. An Independent claim is included for SOI substrate.
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